Novel polyhedral oligomeric silsesquioxane (POSS) resists, which are based on a new photo-crosslinking system via Wolff rearrangement, are developed as ideal replica mold materials for ultraviolet-nanoimprint lithography. These POSS resist materials are synthesized by incorporating diazoketo and hydroxyl groups into the POSS core. The resist materials have exhibited a variety of desirable properties as replica molds, such as high modulus, low shrinkage ratio, high transparency, low surface energy, and resistance to organic solvents. The resultant replica molds exhibit a high resolution patterning capacity. These economic fabrication methods of replica molds with high mechanical durability and good releasing properties are potentially useful for versatile applications in the area of mold-based lithography.
Diazoketo-functionalized POSS resists for high performance replica molds of ultraviolet-nanoimprint lithography.